Introduction to Semiconductor Laser Diodes Since the mid-1980s, the development of semiconductor manufacturing technology and the combination with laser technology have led to the development of semiconductor laser diodes, which have higher peak power and lower laser power. The energy consumption, and its emission pulse width is also narrow, does not require temperature and optical compensation, has obvious advantages over the traditional emission source, and has become the focus of the development of AlGaN in the middle ultraviolet band. Welcome to the company **http:// Because this band of ultraviolet radiation has the highest excitation efficiency, and its output efficiency is also high.
In order to make the ultraviolet radiation source more practical, one direction of semiconductor ultraviolet diode development is to greatly reduce the volume and power consumption of the existing ultraviolet laser and its power supply. The other direction is to develop a light-emitting diode with an emission wavelength of 280 nm and a power consumption of less than 10 mW. And a laser diode having an emission wavelength of 340 nm and a power consumption of less than 25 mW.
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