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Recently, "Nanoscale" magazine titled "Edge Control of Graphene Domains Grown on Hexagonal Boron Nitride", published online the Chinese Academy of Sciences Shanghai Microsystems and Information Technology The State Key Laboratory of Information Functional Materials, Chen Lingxiu, Wang Haomin and other researchers have made important progress in the controlled growth of graphene. The paper was selected by the magazine as a back cover map article.
The ideal graphene is a zero band gap semimetal, and the boundary is an important factor that affects its electronic energy band structure. The realization of the boundary control of graphene domains is a widely recognized frontier topic. However, this study faces multiple challenges of lacking theoretical guidance and specific solutions. Therefore, it is extremely important to realize the controllable boundary and even the preparation of the band for the study of the physical properties of graphene and its application in electronics and so on.
The graphene is directly grown on the insulated hexagonal boron nitride matrix and the boundary is regulated, which not only can maintain the excellent intrinsic characteristics of the graphene to the utmost, but can also be applied directly to the nanoelectronic device after the growth, avoiding the transfer from the metal matrix. Interface pollution and lattice damage. Researchers at Shanghai Institute of Microsystems have succeeded in realizing boundary modulation of graphene domains by changing the ratio of carbon source gas (C2H2) to catalytic gas (SiH4) on the basis of the gas-phase catalytic growth of graphene on hexagonal boron nitride surfaces. The crystal domain boundaries can be controlled between armchair and zigzag orientations. By using a graphene surface precisely aligned with a hexagonal boron nitride matrix, a moiré fringe superlattice structure is exhibited, and an atomic resolution atomic force microscope (AFM) image is used as a judgment basis to realize recognition of the graphene boundary orientation. Based on this process, epitaxial growth was performed on a hexagonal boron nitride surface at a single step, and graphene strips with different orientations and flat boundaries were successfully obtained.
The research results provide alternative schemes for the large-scale preparation and energy band engineering of graphene nanoribbons.
In recent years, focusing on the topic of preparation of high-quality graphene materials for microelectronics applications, the research team of the Shanghai Microsystems Institute has developed a distinctive research path, particularly in the field of controlled preparation of graphene on hexagonal boron nitride surfaces. The research team obtained a series of original research results: graphene nucleation mechanism on boron nitride surface (Carbon 50, 329–331 (2012)) and graphene stack orientation recognition (Scientific Reports 3, 2666 (2013)) The vapor phase catalytic growth of graphene domains (Nature Communications 6, 6499 (2015)) and the controlled preparation of graphene nanoribbons (Nature Communications (2017, 8, 14703)).
The relevant research has received major support from the major special projects of the Ministry of Science and Technology, the forward-looking key deployment projects of the Chinese Academy of Sciences, the Class B pilot project of the Chinese Academy of Sciences, and the Shanghai Science and Technology Commission project. The research partners include Shanghai University of Science and Technology, Huazhong University of Science and Technology, Central South University and Shanghai Institute of Technical Physics, Chinese Academy of Sciences.
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